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LOW-LIGHT-LEVEL NIR (NEAR INFRARED:1.4m/1.7m) MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS
APPLICATION EXAMPLE: Photoluminescence measurement
Sample 1
SAMPLE TEMPERATURE
InAlAs/InGaAs
single quantum wells
Photoluminescence spectra emitted from a sample with different InGaAs well widths. This data proves that intensity distribution of the spectrum corresponding to each quantum well varies with the excitation light power.
77K
Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)
InGaAs InAlAs InGaAs InAlAs InGaAs InAlAs InGaAs InAlAs Fe doped 50 A 300 A 30 A 300 A 60 A 300 A 100 A 3000 A InP (100) sub.
INTENSITY (RELATIVE)
30 A
60 A
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 x 0.2 mm 100 A SAMPLE TEMPERATURE: 77K
EXCITATION LIGHT POWER: 8W EXCITATION LIGHT POWER: 50W EXCITATION LIGHT POWER: 0.6mW EXCITATION LIGHT POWER: 3mW 1100 1200 1300 1400 1500 1600 1700
WAVELENGTH (nm)
TPMHB0627EB
OVER VIEW
Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 m or 1.7 m where beyond 1.1 m have been the limit of conventional photocathodes. NIR-PMTs the R5509-42 and -72 not only have these new spectral response ranges, but also have good features of conventional photomultiplier tubes for fast time response and photon counting performance, which allow weak light detection in the near infrared region. They can solve the problems of low sensitivity and slow time response in other conventional near infrared detectors like a germanium diode which is so far commonly used in this range.
FEATURES
GUsing a "low power excitation light" allows high-precision measurement not affected by strong excitation light.
High gain and low noise improve the detection limit.
GFlat response from visible to near IR minimize spectral sensitivity correction.
The spectral response covers a wide range from 300 nm to 1.4 m or 1.7 m.
GPhotoluminescence from a room temperature sample can be measured.
High sensitivity enables weak light emission measurement.
GTime resolved measurement in near IR is realized.
Fast time response (Rise time: 3 ns).
TPMHF0435
APPLICATION EXAMPLES
Photoluminescence measurement Sample 2
SAMPLE TEMPERATURE
Undoped SI-InP
Emission from deep levels in a semiinsulating InP substrate at room temperature was clearly observed.
INTENSITY (RELATIVE)
300K ( )
room temperature
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 300K
X10 EXCITATION LIGHT POWER: 0.6 mW X1
X1 700 800 900
EXCITATION LIGHT POWER: 3 mW X10 1000 1100 1200 1300 1400 1500 1600 1700
WAVELENGTH (nm)
TPMHB0621EA
Data shows that intensity distribution of the photoluminescence spectrum changes with excitation light power. Using a "low power excitation light" allows high-precision measurement not subject to variations in excitation light intensity. It is therefore essential to use "low power excitation light" in order to measure emission from deep levels and total band-to-band transition.
Data was measured with a near infrared measurement system described later.
SAMPLE TEMPERATURE
77K
INTENSITY (RELATIVE)
EXCITATION LIGHT : SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 77K
EXCITATION LIGHT POWER: 0.05 mW
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW 800 900 1000 1100 1200 1300 1400 1500 1600
WAVELENGTH (nm)
TPMHB0622EA
Sample 3
SAMPLE TEMPERATURE
Undoped SI-GaAs
Emission from deep levels in a semiinsulating GaAs substrate at room temperatures was clearly observed.
INTENSITY (RELATIVE)
300K ( )
room temperature
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 300K
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700
WAVELENGTH (nm)
TPMHB0619EA
SAMPLE TEMPERATURE
77K
INTENSITY (RELATIVE)
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 77K
EXCITATION LIGHT POWER: 2 nW
700
800
900
1000 1100 1200 1300 1400 1500 1600 1700
Data was measured with a near infrared measurement system described later.
WAVELENGTH (nm)
TPMHB0620EA
Sample 4
SAMPLE TEMPERATURE
B-Doped Si (111)
low resistivity wafer > 0.02 kcm
Silicon, the indirect bandgap semiconductor, has lower photoluminescence emission compared with direct bandgap semiconductors such as GaAs, InP, etc. However, the NIR-PMT has made it possible to observe a clear photoluminescence spectra from a room temperature silicon wafer even at low power excitation lights.
INTENSITY (RELATIVE)
300K ( )
room temperature
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 300K
EXCITATION LIGHT POWER: 0.05 mW
EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW 900 1000 1100 1200 1300 1400
TPMHB0623EA
WAVELENGTH (nm)
SAMPLE TEMPERATURE
77K
INTENSITY (RELATIVE)
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.05 x 0.05 mm SAMPLE TEMPERATURE: 77K
EXCITATION LIGHT POWER: 3 mW
900
1000
1100
1200
1300
1400
WAVELENGTH (nm)
TPMHB0624EA
high resistivity wafer > 5 kcm
Clear photoluminescence spectra can be observed at room temperature, even in faint emission from a high resistivity silicon wafer.
Data was measured with a near infrared measurement system described later.
SAMPLE TEMPERATURE
SAMPLE TEMPERATURE
300K
INTENSITY (RELATIVE)
(room temperature)
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 300K
77K
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.05 x 0.05 mm SAMPLE TEMPERATURE: 77K
INTENSITY (RELATIVE)
EXCITATION LIGHT POWER: 3 mW
EXCITATION LIGHT POWER: 3 mW
900
1000
1100
1200
1300
1400
900
1000
1100
1200
1300
1400
WAVELENGTH (nm)
TPMHB0625EA
WAVELENGTH (nm)
TPMHB0626EA
Sample 5
SAMPLE TEMPERATURE
InAs/InGaAs
quantum dots structure
Figure shows PL spectrum at the room temperature from InAs quantum dots covered with InGaAs layer. Size and uniformity of quantum dots can be estimated from the peak wavelength and the FWHM of PL spectrum. However, when excitation power is increased, luminescence of shorter wavelength (1200 nm) becomes strong, and the estimate of exact peak wavelength and the FWHM becomes impossible. Therefore, it is important that excitation power must be kept as weak as possible for precise measurement. For this reason, a high sensitivity detector is required.
Data was measured with a near infrared measurement system described later.
INTENSITY (RELATIVE)
300K room (temperature)
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 mm / 0.2 mm SAMPLE TEMPERATURE: 300 K
EXCITATION LIGHT 30 mW 3 mW 0.3 mW 0.03 mW 0.003 mW 1050 1100 1150 1200 1250 1300 1350 1400 1450
TPMHB0664EA
WAVELENGTH (nm)
Basic Structure
InGaAs 15 nm InAs dots InGaAs 5 nm
GaAs buffer
300 nm
GaAs (100) substrate
APPLICATION EXAMPLES
Photoluminescence measurement Sample 6
SAMPLE TEMPERATURE
InGaAsP/InP
p - InP 0.02 m 2 x 1016 cm-3 p - InGaAsP 2 m p + InP 2 m
INTENSITY (RELATIVE)
300K ( )
room temperature
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 x 0.5 mm SAMPLE TEMPERATURE: 300K
EXCITATION LIGHT POWER: 0.6 mW
p + InP SUB 350 m
EXCITATION LIGHT POWER: 3 mW
TPMHC0187EB
1100
1200
1300
1400
1500
1600
1700
TPMHB0617EA
An epitaxial wafer at the room temperature can be evaluated. Photoluminescence measurement in 77K sample is possible at low power excitation lights from a few to tens of micro-watts.
WAVELENGTH (nm)
SAMPLE TEMPERATURE
77K
INTENSITY (RELATIVE)
EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 x 0.2 mm SAMPLE TEMPERATURE: 77K
EXCITATION LIGHT POWER: 8 W
EXCITATION LIGHT POWER: 50 W
EXCITATION LIGHT POWER: 0.6 mW
EXCITATION LIGHT POWER: 3 mW 1100 1200 1300 1400 1500 1600 1700
TPMHB0618EA
Data was measured with a near infrared measurement system described later.
WAVELENGTH (nm)
GComparison with Ge PIN photodiode
Sample 7
SAMPLE TEMPERATURE
B-Doped Si (111)
low resistivity wafer 0.005-0.2 cm
The R5509-42 PMT provides high detection efficiency that allows detecting a distinct photoluminescent peak with a high S/N ratio from a room temperature sample. The data were taken with a relatively weak excitation in order to compare with a germanium detector (Ge PIN PD) which did not show a clear peak.
INTENSITY (RELATIVE)
300K ( )
room temperature
EXCITATION LIGHT: Ar LASER (514.5 nm) SAMPLE TEMPERATURE: 300 K
R5509-42
Ge PIN-PD (77 K)
1000
1200
1400
TPMHB0451EC
WAVELENGTH (nm)
Sample 8
SAMPLE TEMPERATURE
InGaAsP/InP
InGaAs/InP photoluminescence measurements were performed under weak excitation conditions in order to compare the detection limit between the R5509-72 and a Ge PIN photodiode. The result proves that the R5509-72 allows to detect a peak output in the vicinity of 1.3 m which is undetectable with the Ge PIN photodiode. In addition to the improvement in the detection limit at low light levels in the NIR region, the R5509-72 provides excellent time response, therefore, time-resolved photometry in the NIR region is now possible.
77K
INTENSITY (RELATIVE)
EXCITATION LIGHT: Ar LASER (514.5 nm) 200 W SAMPLE TEMPERATURE: 77 K
R5509-72
Ge PIN PD (77 K) 1200 1250 1300 1350 1400
WAVELENGTH (nm)
TPMHB0453EC
Measurement of Raman spectroscopy Sample 9
SAMPLE TEMPERATURE
Rhodamine B in Ethanol Solution
(2 x 10-2 mol/L)
Raman spectroscopy is effective in studying the structure of molecules in a solution. In particular, near infrared Raman spectroscopy enables measurement of samples which were previously impossible with conventional methods using visible light excitation because of the influence of fluorescence. In this application, clear Raman spectra of solute rhodamine B (marked by M) are measured, as well as a Raman spectrum of ethanol solution. This data was obtained with weak excitation light averaging 10 mW output using pulsed excitation light and gate detection method under fluorescent room lighting conditions.
300K room (temperature)
INTENSITY
EXCITATION LIGHT: LD-PUMPED ND: YAG (1064 nm) 10 mW, 10 ns pulse, 10 kHz SAMPLE TEMPERATURE: 77 K RHODAMINE B POWDER
SAMPLE ETHANOL
1600
1400
1200
1000
800
TPMHB0452EB
RAMAN SHIFT
(cm-1)
Cathodoluminescence (CL) measurement Sample 10
SAMPLE TEMPERATURE
InAs/InP
The data on the right show images of cathodoluminescence (CL) emitted from InAs islands in an InAs/InP multiple quantum well structure, observed with a scanning electron microscope (SEM) to which a light collection system and a monochromator were installed. The righthand CL images were taken with the SEM using a Ge PIN photodiode. These images are not clear due to external noise such as cosmic rays. In contrast, the left-hand data taken with an R550942 photomultiplier tube shows clear, sharp CL images with a high S/N ratio. The R5509-42 allows high-sensitivity CL measurements in the near infrared region, which are expected to prove useful in optical evaluations of samples, analysis of inorganic or organic substances, and other near infrared spectroscopy.
Cathodoluminescence (CL) Measurement When a sample is irradiated by high-velocity electron beams, electron-hole pairs in the sample are excited and then recombine while producing a characteristic luminescence known as cathodoluminescence (CL). Information on the internal electron structures of the sample can be studied by measuring this luminescence.
10K
990nm
R5509-42 990nm
Ge PIN-PD
77K
1010nm
1020nm
1030nm
1040nm
Condition
Electron Probe Accelerating Voltage Current 5 kV 10 nA
Photos: By courtesy of Prof. Y. Takeda, Dept. of Materials Science and Engineering, Graduate School of Engineering, Nagoya University; Prof. A. Nakamura, Center for Integrated Research in Science and Engineering, Nagoya University
APPLICATION EXAMPLES
Measurement of singlet oxygen Sample 11
SAMPLE TEMPERATURE
Singlet oxygen
Rose Bengal in pure water
Using the R5509-42 and a pulsed laser, singlet oxygen emission with a peak at 1270 nm were efficiently detected by signal processing with a gated pulse counter, reducing effects of fluorescence. (Data obtained by CW YAG laser excitation is also shown in the same graph for comparison.) The graph on the right shows detection limits evaluated by changing the concentration of the photosensitizer Rose Bengal. This proves that emissions from singlet oxygen of low concentration, even only 1 nmol/L, can be
INTENSITY (RELATIVE)
300K room (temperature)
2 1.8 1.6 1.4 1.2 CW 1 0.8 0.6 0.4 0.2 0 1150 GATED PHOTON COUNTING METHOD GATED PHOTON COUNTING METHOD EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 12 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm/ 2 mm GATED DELAY TIME: 1.5 s GATE TIME: 5 s
1200
1250
1300
1350
WAVELENGTH (nm)
TPMHB0665EA
SAMPLE TEMPERATURE
SIGNAL OUTPUT (COUNTS)
300K room (temperature)
105
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 12 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm / 2 mm CONCENTRATION OF ROSE BENGAL 10 mol/L 1 mol/L
104
103 1 nmol/L
102
101 1100
1150
1200
1250
1300
1350
1400
1450
TPMHB0666EA
Data was measured with a near infrared measurement system described later.
WAVELENGTH (nm)
Sample 12
SAMPLE TEMPERATURE
INTEGRATED COUNTS (500 SHOT)
Singlet oxygen
Rose Bengal in acetone, methanol and water
Lifetime characteristics and emission spectrum of the singlet oxygen when the photosensitizer Rose Bengal was dissolved in acetone, methanol and water were measured. Singlet oxygen lifetime can be measured with high accuracy, by using gated photon counting techniques that utilize high-speed response of a near infrared PMT and allow continuous scan of signal pulses obtained in a short gate time (sampling time). In solvents which singlet oxygen has a long life, there is little singlet oxygen that thermally disappears so more singlet oxygen disappears during the emission process. This results in an increase in the entire emission level.
Data was measured with a near infrared measurement system described later.
300K room (temperature)
104
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 2.5 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm / 2 mm GATE (sampling) TIME: 1 s
103 =62 s in CH3COCH3 (ACETONE) 102 =11 s in CH3OH (METHANOL) 101 =3.7 s in H2O (WATER) 100 0 10 20 30 40 50 60 70 80 90 100
TIME (s)
TPMHB0667EA
SAMPLE TEMPERATURE
INTEGRATED COUNTS (100 SHOT)
300K room (temperature)
1.4 x 104 1.2 x 104 1.0 x 104 0.8 x 104 0.6 x 104 0.4 x 104 0.2 x 104 0 1200
EXCITATION LIGHT: PULSE SHG Nd: YAG (532 nm) 2.5 mJ, PULSE WIDTH: 10 ns, 20 Hz SLIT: 2 mm / 2 mm GATED DELAY TIME: 3 s GATE TIME: 50 s CH3COCH3 CH3OH H2O
1220
1240
1260
1280
1300
1320
1340
WAVELENGTH (nm)
TPMHB0668EA
The samples 2 to 6 , 11 and 12 were measured with the measurement system shown below:
Measurement System
Most of the application data in this sheet were measured with the following system using an R5509 series PMT. Time resolved measurement and gated measurement were performed with a pulsed YAG laser and a photon counter in place of CW laser and lock-in amplifier.
ISTRUCTURE
Excitation light: LD-pumped Nd: (SHG) YAG laser, =532 nm, maximum output=50 mW or Pulsed Nd: (SHG) YAG laser, =532 nm, pulse energy more than 12 mJ, repetition rate=20 Hz, pulse with=5 ns to 7 ns Monochromator: Czerny-Turner type Aperture ratio: F=3, Focal length: 100 mm, Diffraction grating: grooves/mm=600, Brazed wavelength=1 m, Wavelength resolution: 2 nm Detector: NIR PMT R5509-42 or R5509-72 Exclusive cooler PC176TSCE005 [Cooling Temperature: -80 C] Sample cell: LN2 dewar or without Signal processing: Lock-in amplifier or photon counter
ISYSTEM CONFIGURATION WITH CW LASER + LOCK-IN AMPLIFIER
OPTICAL CHOPPER MIRROR FILTER LASER
MIRROR LN2 DEWAR
DRY NITROGEN LIQUID NITROGEN CONTAINER LENS COOLER
LENS FILTER MONOCHROMATOR
LOCK-IN AMP NIR-PMT
SAMPLE
COMPUTER
TPMOC0155EA
GREFERENCE
Photocathode and Photomultiplier tubes
1. 2. M. Niigaki, T. Hirohata, T. Suzuki, N. Oishi, S. Furuta, H. Kan and T. Hiruma, "Near Infrared Photomultiplier with Transferred Electron Photocathode", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 189 (1995) M. Niigaki, T. Hirohata, T. Suzuki, H. Kan and T. Hiruma, "Field-assisted photoemission from InP/InGaAsP photocathode with p/n junction", Appl. Phys. Lett., 71, 2493 (1997)
Photoluminescence
3. 4. 5. 6. 7. 8. 9. S. Furuta, K. Kuroyanagi, M. Niigaki, T. Hirohata, H. Kan and T. Hiruma, "Characterization of Doped-Si and SiGe Quantum Well Using Near-Infrared Photomultiplier Tube", Bulletin of the Research Institute of Electronics, Shizuoka Univ. 30-3, 233 (1995). S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, J. Cryst. Growth, "Quantitative analysis of light emission from SiGe quantum wells", 157 1 (1995) S. Fukatsu, H. Akiyama, Y. Shiraki and H. Sakaki, "Radiative recombination in near-surface strained Si1-xGex/Si quantum wells", Appl. Phys. Lett., 67, 3602 (1995) S. Fukatsu, Y. Mera, M. Inoue, K. Maeda, H. Akiyama and H. Sakaki, "Time-resolved D-band luminescence in strain-relieved SiGe/Si", Appl. Phys. Lett., 68, 1889 (1996) M. Tajima, S. Ibuka, H. Aga and T. Abe, "Characterization of bond etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation", Appl. Phys. Lett., 70, 231 (1997) M. Tajima and S. Ibuka, "Luminescence due to electron-hole condensation in silicon-on-insulator", Jpn. J. Appl. Phys., 84, 2224 (1998) Y. Mita, M. Akami and S. Murayama, "Infrared photoluminescence and optical characteristics in Ge-doped ZnSe crystals", Appl. Phys. Lett., 76, 2223 (2000)
10. Takashi Suemasu, Yoichiro Negishi, Kenichiro Takakuma and Fumio Hasegawa, "Room Temperature 1 m Electroluminescence from a SiBased Light Emitting Diode with -FeSi2 Active Region", Jpn. J. Appl. Phys., 39, L1013 (2000) 11. Shigero Ibuka and Michio Tajima, "Characteristics of Silicon-on-Insulator Wafers by Photoluminescence Decay Lifetime Measurement", Jpn. J. Appl. Phys., 39, L1124 (2000)
Singlet oxygen
12. O. Shimizu, J. Watanabe, K. Imakubo and S. Naito, "Formation of Singlet Oxygen Photosensitized by Aromaic Amino Acids in Aqueous Solutions", Chemistry Lett., 19, 203 (1997) 13. O. Shimizu, J. Watanabe and K. Imakubo, "Photon-Counting Technique Facilitates both Time-and Spectra-Resolved Measurements of Near-IR Emission of Singlet Oxygen O2(1g) in Aqueous Solution", J. Phys. Soc. Jpn., 66, 268 (1997)
SPECIFICATIONS
GGENERAL
Parameter Spectral Response Photocathode Window Dynode Material Minimum Effective Area Material Secondary Emitting Surface Structure Number of Stage R5509-42 300 to 1400 InP/InGaAsP 3x8 Borosilicate glass Cu-BeO Line focused 10 21-pin base -80 R5509-72 300 to 1700 InP/InGaAs Unit nm -- mm -- -- -- -- -- C
Base Recommended Operating Ambient Temperature
GMAXIMUM RATING (Absolute maximum values)
Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current Storage Ambient Temperature Operating Ambient Temperature Value 1750 250 2 -90 to +50 -90 to -70 Unit V dc V dc A C C
GCHARACTERISTICS (at -80 C, Supply voltage: -1500 V dc)
Parameter Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current b Anode Dark Counts b Time Response Quantum Efficiency Radiant a Radiant a
a
Anode Pulse Rise Time Electron Transit Time Transit Time Spread NOTE: aat 1300 nm (R5509-42), at 1500 nm (R5509-72)
R5509-42 Min. Typ. Max. Min. 0.48 -- -- 0.29 5 -- -- 3.5 1000 -- -- 700 2 x 105 1 x 106 -- 2 x 105 -- 5 -- 10 -- 2 x 104 -- -- -- -- 3 -- -- -- 23 -- -- -- 1.5 -- bAfter 30 minutes' storage in darkness
R5509-72 Typ. -- -- -- 1 x 106 50 2 x 105 3 23 1.5
Max. -- -- -- -- 100 -- -- -- --
Unit % mA/W A/W -- nA s-1 ns ns ns
The dedicated coolers PC176TSCE005 and PC176TSCE006 are shipped after adjusting the voltage divider circuit to provide the optimum voltage distribution ratio that best matches the PMT.
DIMENSIONAL OUTLINE AND BASING DIAGRAM (Unit: mm)
51 1 3
Top View 33 PIN No.3 PIN No.1
[Cautions for operation]
2
PHOTOCATHODE (3 x 8) 20 1
PIN No.14
GOperate the tube at the anode current less than 2 A while the entire photocathode is illuminated in order to avoid the photocathode damage due to excessive cathode current. GIn order to protect the photocathode, the high voltage should be increased or decreased gradually. GWhen the R5509-42 or -72 shall to be operated, do not supply the high voltage before the tube is cooled down to -70 C at least. GUse the exclusive cooler PC176TSCE005 or PC176TSCE006 for cooling.
8
90 2. 5
15
88 2
Bottom View
IC IC IC IC P7 DY10 6 DY8 5 DY6 DY9 DY7
[Warranty]
GA cooler other than specified may cause a trouble in the tube like loss of performance or a mechanical damage. Any trouble caused in association with a cooler other than specified shall not be subject to warranty. GHamamatsu photomultiplier tubes are warranted to the original purchase for a period of 12 months following the date of shipment. The warranty is limited to repair or replacement of any defective material due to defects in workmanship or materials used in manufacture.
HA COATING PHOTOCATHODE LIGHT SHIELD
8
9
10 11 12
4 3
14 MAX.
2 DY4 1 DY2 K
13 DY5 14 15 DY3 16 DY1 17 IC DY : K: 18 B P: 19 20 IC B: 21
IC IC
SHORT PIN
TPMHA0283EC
Dynode Photocathode Anode Bias Electrode IC : Internal Connection (Do not use)
TPMHA0284EC
CHARACTERISTICS FIGURES
GSpectral Response
TPMHB0426EB
GTypical Gain (R5509-42, -72)
-80 C
TPMHB0403EA
102
108
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY 101
R5509 - 72
107
106 100
GAIN
QUANTUM EFFICIENCY 10-1 R5509 - 42 10-2 10-3 200 400 600 800 1000 1200 1400 1600 1800
105
104
103
102 500
700
1000
1500
2000
WAVELENGTH (nm) * Spectral response characteristics when used with the dedicated cooler
SUPPLY VOLTAGE (V)
GTemperature Characteristics of Dark Current (After 30 minutes storage in darkness)
10-6
TPMHB0425EA
GSingle Photoelectron Pulse Height Distribution (PHD)
R5509-42
1.4
TPMHB0404EA
at 1500V
COUNTS PER CHANNEL (1 x 104)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 200
10-7
R5509-72
WAVELENGTH OF INCIDENT LIGHT : 1300 nm : -1500 V dc SUPPLY VOLTAGE SIGNAL + DARK COUNTS : 33 600 s-1 : 16 900 s-1 DARK COUNTS AMBIENT TEMPERATURE : -80 C
DARK CURRENT (A)
PHOTON + DARK
10-8
R5509-42
DARK
10-9
400
600
800
1000
10-10 -90
CHANNEL NUMBER (ch)
-80 -70
TEMPERATURE (C)
GOutput Waveform (R5509-42)
TPMHB0406EA
R5509-72
14
TPMHB0428EA
COUNTS PER CHANNEL (1 x 104)
12 10 8 6 4
DARK
OUTPUT VOLTAGE [1 mV/Div]
WAVELENGTH OF INCIDENT LIGHT : 1500 nm : -1500 V dc SUPPLY VOLTAGE SIGNAL + DARK COUNTS : 298 000 s-1 : 175 000 s-1 DARK COUNTS AMBIENT TEMPERATURE : -80 C
PHOTON + DARK
SUPPLY VOLTAGE : -1500 V dc RISE TIME : 2.40 ns FALL TIME : 6.36 ns WAVELENGTH : 1300 nm AMBIENT TEMPERATURE : -80 C RL : 50
2 0 0 200 400 600 800 1000
CHANNEL NUMBER (ch) TIME [5 ns/Div]
RELATED PRODUCTS
Exclusive cooler PC176TSCE005 and PC176TSCE006 for R5509-42, -72
PC176TSCE005 and PC176TSCE006 are exclusively designed coolers for R5509-42 and -72 using liquid nitrogen. The dark current of R5509-42 and -72 will be reduced drastically by cooling so that the PMT will be able to detect very weak light. The cooler housing is magnetically and electrostatically shielded excluding external noises to provide very stable and high S/N ratio measurement. Hamamatsu also provides the PC176TSCE006 cooler suitable for a selfpressurized liquid nitrogen container.
IFEATURES
GTemperature controllable range: 0 to -100 C (R5509-42, -72 operating range shall be: -70 to -90 C) GExclusive socket assembly with load resistor selectable circuit GBuilt-in magnetic electrostatic shield GBuilt-in warning buzzer for liquid nitrogen supply shortage
ISPECIFICATIONS
Parameter Coolant medium Temperature Controllable Range Cool-down Time Liquid Nitrogen Consumption rate (Max.) Gas Pressure Dry Nitrogen Consumption rate Voltage Divider Current -HV Connector Socket Assembly Signal Connector Load Resistor AC Input Voltage Power Consumption Operating Ambient Temperature Cooling Unit Weight Controller and others Components PC176TSCE006 Liquid Nitrogen Vaporization 0 C to -100 C (continuously adjustable) Approx. 2 h (-80 C setting) 0.75 L/h (-100 C setting) 35 kPa -- 47 L (14.7 MPa)/100 h -- 158 A (PMT Supply Voltage: -1750 V) SHV-R BNC-R 50 / 1 k/ 100 k/ 10 M/ Open 100 V to 120 V, 220 V to 240 V (50/60 Hz) 15 VA Less than +30 C Approx. 6 kg Approx. 11 kg Approx. 11 kg Cooling Unit, Controller, Solenoid Control Cable, Cooling unit, Controller, Solenoid Control Cable, Flow Solenoid Valve, 3/8" OD Rubber Tube, Limit Valve, Solenoid Valve, Insulated Transfer Insulated Transfer Hose, LN2 Transfer Head for Hose, Control Solenoid with Connecting Hose with 35 mm to 40 mm Neck OD LN2 Dewar 3/4-16UNF or PT 1/4 Screws in End PC176TSCE005
IDIMENSIONAL OUTLINE (Unit: mm)
Cooling unit
222 CENTER OF PHOTOCATHODE 330 111 86 6-M3 222 13 109 80.5 43 PHOTOCATHODE* (3 x 8) 13 111 O-RING 86 PHOTOMULTIPLIER TUBE PHOTOCATHODE 152 120 152 57 LN2 OUT (IN) SOCKET ASSEMBLY LN2 IN (OUT) SIDE VIEW -HV (SHV-R) SIGNAL OUTPUT (BNC-R) SOCKET ASSEMBLY 152.4 85.7 66.7 114 152.4 LOAD RESISTOR ADJUSTOR SWITCH 4-No.10-32 UNC-2B 4-M6
TACCA0151EF
PHOTOMULTIPLIER TUBE 59
12
0
6-M3
111
EVACUATED WINDOW WINDOW FLANGE HOUSING FRONT PANEL
BOTTOM VIEW * The socket assembly can be rotated by 90 degrees in order to match the shape of the input light.
ICONNECTION DIAGRAM
GPC176TSCE005
*PRESSURE REGULATOR COOLING UNIT SOLENOID CONTROL CABLE WINDOW HEATER CABLE CONTROLLER AC 100 V to 120 V, AC 200 V to 240 V INSULATED TRANSFER HOSE
IOTHER ACCESSORIES REQUIRED
GLiquid nitrogen dewar Non-pressurized dewar having a capacity of 10 to 50 litters, and the neck outer diameter between 35 and 40 mm. GHigh voltage power supply for the photomultiplier tube (negative high voltage) Output voltage: more than -1750 V Output current: more than 0.2 mA Low ripple, High stability GDry nitrogen gas, pressure regulator (secondary pressure 35 kPa), pressure gauge In order to supply a proper amount of liquid nitrogen to the cooling unit, an external pressure needs to be added to the dewar. A pressure regulator capable of reducing a secondary pressure to 35 kPa is necessary when used with a dry nitrogen gas container. Connect the 3/8" rubber tube to the exit of the pressure regulator.
3/8" OD RUBBER TUBE SOLENOID VALVE *DRY NITROGEN GAS SOURCE
LN2 TRANSFER HEAD
*DEWAR OF LN2 *NOT SUPPLIED
TACCC0090EC
GPC176TSCE006
3/4-16UNF PT1/4 SOLENOID VALVE COOLING UNIT WINDOW HEATER CABLE CONTROLLER AC 110 V to 120 V, AC 220 V to 240 V
INSULATED TRANSFER HOSE
IOTHER ACCESSORIES REQUIRED
GLiquid nitrogen dewar Self pressurized dewar having a matching screw of either 3/4-16UNF felmale (removable) or PT 1/4 male. GHigh voltage power supply for the photomultiplier tube (negative high voltage) Output voltage: more than -1750 V Output current: more than 0.2 mA Low ripple, High stability
SOLENOID CONTROL CABLE
*LN2 DEWAR The maximum pressure from the LN2 dewer to the solenoid valve is 300 kPa.
*NOT SUPPLIED
TACCC0116EA
RELATED PRODUCTS
Peripheral devices and options
GRelay optics The relay optics is designed for efficient light collection from the exit slit of a monochromator to the PMT photocathode. Optical axis adjustment can also be made precisely. A mechanical shutler is mounted. For more information, please contact our sales office. GInput window with condenser lens The input window of the PC176TSCE005 and PC176TSCE006 are also available with a condenser lens mounted on its inner side. This window efficiently collects the incoming collimated light onto the PMT photocathode and can be easily replaced with the standard window. GHigh-voltage power supply C3350 Output voltage (DC): 0 V to 3000 V, Output current: 10 mA, Bench-top high-voltage power supply with high stability and low ripple.
Related Products for Photon Counting
GPreamplifiers It is recommended that a fast preamplifier is used in front of the photon counting unit C3866 or C6465. C6438 (DC to 50 MHz) Gain: 20 dB C5594 (50 kHz to 1.5 GHz) Gain: 36 dB GPhoton counting units C3866 high-speed type (maximum count rate: up to 107 s-1) with built-in prescaler C6465 standard type (maximum count rate: up to 106 s-1) These photon counting units convert photoelectron pulses from the R5509 series PMT into a 5 V digital signal. Photon counting with a high S/N ratio can be performed by connecting the output to a pulse counter. We recommend using these photon counting units in conjunction with a C6438 or C5594 series preamplifiers. GPhoton counting board M7824, M8503 The M7824 photon counting board is designed for direct plug-in to the ISA bus slot in a PC. The M7824 has a pulse counter that counts photoelectron pulses converted into logic (TTL) signals by a photon counting unit, and transfers them to the PC. The built-in gate function with 50 s (Min.) internal gate facilitates photon counting with a wide dynamic range. The M8503 has fast internal gating of 50 ns (minimum) enabling fast time resolved measurement in highly repetitive (1 MHz Max.) phenomena like fluorescence.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K
HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMH1267E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
SEPT. 2001 IP Printed in Japan (1500)

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